| PART |
Description |
Maker |
| IS93C76A IS93C86A |
(IS93C76A / IS93C86A) 8K-BIT/16K-BIT SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| IS25C02 IS25C04 |
(IS25C02 / IS25C04) 2K-BIT/4K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI
|
| IS25C64A-3ZLA1 IS25C32A IS25C32A_07 IS25C32A-2GI I |
32K-BIT/64K-BIT SPI SERIAL ELECTRICALLY ERASABLE PROM
|
ISSI[Integrated Silicon Solution, Inc]
|
| M6M80041 M6M80041FP M6M80041P |
4096-BIT (256-WORD BY-180 -BIT) ELECTRICALLY ERASABLE AND PROGRAMMABLE ROM
|
Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
|
| M5M27C202JK-10 M5M27C202JK-12 M5M27C202JK-15 M5M27 |
2097152-BIT(131072-WORD BY 16-BIT) CMOS ERASABLE AND ELECTRICALLY REPROGRAMMABLE ROM
|
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| BR24L01A-W BR24L01AFJ-W BR24L01AFV-W BR24L01AFVM-W |
128×8 bit electrically erasable PROM
128 bit electrically erasable PROM 128位电可擦除可编程ROM
|
Rohm Co., Ltd.
Rohm CO.,LTD.
|
| 24C64 TU24C64CP2 TU24C64CP3 TU24C64CS2 TU24C64CS3 |
CMOSIC2-WIREBUS64KELECTRICALLYERASABLEPROGRAMMABLEROM8KX8BITEEPROM
From old datasheet system
CMOS I?C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
CMOS I2C 2-WIRE BUS 64K ELECTRICALLY ERASABLE PROGRAMMABLE ROM 8K X 8 BIT EEPROM
|
Electronic Theatre Controls, Inc.
ETC[ETC]
List of Unclassifed Manufacturers
|
| 28LV256SI-3 28LV256SI-4 28LV256SI-5 28LV256SI-6 28 |
Speed: 200 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 250 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 300 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Speed: 400 ns, Low voltage CMOS 256 K electrically erasable programmable ROM 32K x 8 BIT EEPROM
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 200 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 250 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 400 ns.
Low voltage CMOS. 256K electrically erasable programmable ROM. 32K x 8 bit EEPROM. Access time 300 ns.
|
Turbo IC
|
| BR24L64-W BR24L64-W1 |
8k?8 bit electrically erasable PROM
8k×8 bit electrically erasable PROM
|
Rohm
|
| M58655P |
1024-BIT ELECTRICALLY ALTERABLE ROM
|
Mitsubishi Electric Sem...
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
| M5G1400P |
1400 BIT ELECTRICALLY ALTERABLE ROM 1400位可变光盘电
|
Mitsubishi Electric, Corp.
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
|
